Dangos 131 - 140 canlyniadau o 179 ar gyfer chwilio '"Tunneling"', amser ymholiad: 0.01e Mireinio'r Canlyniadau
  1. 131

    Process and circuit design interlock for application-dependent scaling tradeoffs and optimization in the SoC era. gan Diaz, C.H

    Erthygl

    Process and circuit design interlock for application-dependent scaling tradeoffs and optimization in the SoC era.
  2. 132

    A code division multiplexing scheme for satellite digital audio broadcasting. gan Weerackody, V.

    Erthygl

    A code division multiplexing scheme for satellite digital audio broadcasting.
  3. 133

    Magnetoelectronic memories last and last. gan Johnson, M.

    Cyhoeddwyd yn IEEE spectrum
    Erthygl

    Magnetoelectronic memories last and last.
  4. 134

    Radio wave propagation characteristics in lossy circular waveguides such as tunnels, mine shafts, and boreholes. gan Holloway, C.L

    Erthygl

    Radio wave propagation characteristics in lossy circular waveguides such as tunnels, mine shafts, and boreholes.
  5. 135

    Modeling radio wave propagation in tunnels with a vectorial parabolic equation. gan Popov, A.V

    Erthygl

    Modeling radio wave propagation in tunnels with a vectorial parabolic equation.
  6. 136

    Prof. James R. Wait and mining production technology-an appreciation. gan Tripp, A.C

    Erthygl

    Prof. James R. Wait and mining production technology-an appreciation.
  7. 137

    S-Cam A cryogenic camera for optical astronomy based on superconducting tunnel junctions. gan Rando, N.

    Erthygl

    S-Cam A cryogenic camera for optical astronomy based on superconducting tunnel junctions.
  8. 138

    A compact analytical model for asymmetric single-electron tunneling transistors. gan Inokawa, H.

    Erthygl

    A compact analytical model for asymmetric single-electron tunneling transistors.
  9. 139

    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. gan Dong-Won Kim

    Erthygl

    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.
  10. 140

    Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N gan Kuo, C.H

    Erthygl

    Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N

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