Search Results - "SiON."

51

Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. by Heitzinger, C.

Published in IEEE Transactions on computer-aided design of integrated circuits and systems

Article

Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches.

52

Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. by Sghaier, N.

Published in IEEE Transactions on electron devices

Article

Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.

53

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. by Nieh, R.E

Published in IEEE Transactions on electron devices

Article

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

54

Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications. by Sen-Shyong Fann

Published in IEEE Transactions on electron devices

Article

Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications.

55

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. by Lallement, C.

Published in IEEE Transactions on electron devices

Article

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.

56

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Published in IEEE Transactions on electron devices

Article

Development of high-current 4H-SiC ACCUFET.

57

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. by Domeij, M.

Published in IEEE Transactions on electron devices

Article

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche.

58

A low-cost uncooled infrared microbolometer detector in standard CMOS technology. by Tezcan, D.S

Published in IEEE Transactions on electron devices

Article

A low-cost uncooled infrared microbolometer detector in standard CMOS technology.

59

A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors. by Melvas, P.

Published in IEEE Transactions on electron devices

Article

A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors.

60

Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. by Dong-Won Kim

Published in IEEE Transactions on electron devices

Article

Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. by Heitzinger, C.

Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. by Sghaier, N.

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. by Nieh, R.E

Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications. by Sen-Shyong Fann

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. by Lallement, C.

Development of high-current 4H-SiC ACCUFET. by Singh, R.

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. by Domeij, M.

A low-cost uncooled infrared microbolometer detector in standard CMOS technology. by Tezcan, D.S

A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors. by Melvas, P.

Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. by Dong-Won Kim

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