Showing 21 - 30 results of 31 for search '"Random access memory."', čas poizvedbe: 0.02s Refine Results
  1. 21

    Post personal info online at your own risk. IN Tech101 Watching IT. od Francisco, Allan D.

    izdano v Manila Bulletin
    Article

    Post personal info online at your own risk. IN Tech101 Watching IT.
  2. 22

    Case of the missing RAM. IN Ask. od Villazon, Luis

    izdano v Mac life
    Article

    Case of the missing RAM. IN Ask.
  3. 23

    A current-based reference-generation scheme for 1T-1C ferroelectric random-access memories. od Siu, J.W.K

    Article

    A current-based reference-generation scheme for 1T-1C ferroelectric random-access memories.
  4. 24

    A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric RAM in 0.35-μm Technology. od Nakamoto, H.

    Article

    A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric RAM in 0.35-μm Technology.
  5. 25

    A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. od Kang, S.

    Article

    A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation.
  6. 26

    Price fixing in the memory market [DRAM prices]. od Moore, S.K

    izdano v IEEE spectrum
    Article

    Price fixing in the memory market [DRAM prices].
  7. 27

    A built-in self-repair design for RAMs with 2-D redundancy. od Jin-Fu Li

    Article

    A built-in self-repair design for RAMs with 2-D redundancy.
  8. 28

    Trim RAM usage, clutter, kitchen consternation. od Blackwell, Laura

    Article

    Trim RAM usage, clutter, kitchen consternation.
  9. 29

    Samsung's 50nm-class, 1Gb DDR2 DRAM to support Intel-based platforms. IN Tech101.

    izdano v Manila Bulletin
    Article

    Samsung's 50nm-class, 1Gb DDR2 DRAM to support Intel-based platforms. IN Tech101.
  10. 30

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. od Inokawa, H.

    Article

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.

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