Showing 21 - 30 results of 31 for search '"Random access memories."', query time: 0.02s Refine Results
  1. 21

    Post personal info online at your own risk. IN Tech101 Watching IT. by Francisco, Allan D.

    Published in Manila Bulletin
    Article

    Post personal info online at your own risk. IN Tech101 Watching IT.
  2. 22

    Case of the missing RAM. IN Ask. by Villazon, Luis

    Published in Mac life
    Article

    Case of the missing RAM. IN Ask.
  3. 23

    A current-based reference-generation scheme for 1T-1C ferroelectric random-access memories. by Siu, J.W.K

    Article

    A current-based reference-generation scheme for 1T-1C ferroelectric random-access memories.
  4. 24

    A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric RAM in 0.35-μm Technology. by Nakamoto, H.

    Article

    A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric RAM in 0.35-μm Technology.
  5. 25

    A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. by Kang, S.

    Article

    A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation.
  6. 26

    Price fixing in the memory market [DRAM prices]. by Moore, S.K

    Published in IEEE spectrum
    Article

    Price fixing in the memory market [DRAM prices].
  7. 27

    A built-in self-repair design for RAMs with 2-D redundancy. by Jin-Fu Li

    Article

    A built-in self-repair design for RAMs with 2-D redundancy.
  8. 28

    Trim RAM usage, clutter, kitchen consternation. by Blackwell, Laura

    Published in PC World Philippines
    Article

    Trim RAM usage, clutter, kitchen consternation.
  9. 29

    Samsung's 50nm-class, 1Gb DDR2 DRAM to support Intel-based platforms. IN Tech101.

    Published in Manila Bulletin
    Article

    Samsung's 50nm-class, 1Gb DDR2 DRAM to support Intel-based platforms. IN Tech101.
  10. 30

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. by Inokawa, H.

    Article

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.

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