Treffer 2.471 - 2.480 von 2.512 für Suche '"N."', Suchdauer: 0,02s Treffer weiter einschränken
  1. 2471

    Monte Carlo simulation and measurement of nanoscale n-MOSFETs. von Bufler, F.M

    Artikel

    Monte Carlo simulation and measurement of nanoscale n-MOSFETs.
  2. 2472

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy von Singh, D.V

    Artikel

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy
  3. 2473

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. von Yang-Yu Fan

    Artikel

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance.
  4. 2474

    Impact-ionization-assisted intermediate band solar cell. von Luque, A.

    Artikel

    Impact-ionization-assisted intermediate band solar cell.
  5. 2475

    Development of high-current 4H-SiC ACCUFET. von Singh, R.

    Artikel

    Development of high-current 4H-SiC ACCUFET.
  6. 2476

    Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon. von Holland, S.E

    Artikel

    Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon.
  7. 2477

    Diagnosing Old MI by Searching for a Linear Boundary in the Space of Principal Components. von Donnelly, M.P

    Artikel

    Diagnosing Old MI by Searching for a Linear Boundary in the Space of Principal Components.
  8. 2478

    Insulation co-ordination for gas-insulated transmission lines (GIL). von Volcker, O.

    Artikel

    Insulation co-ordination for gas-insulated transmission lines (GIL).
  9. 2479

    The silicon p-n-p-n switch and controlled rectifier (thyristor). von Holonyak, N., Jr

    Artikel

    The silicon p-n-p-n switch and controlled rectifier (thyristor).
  10. 2480

    A 4-kB 500-MHz 4-T CMOS SRAM using low-VTHN bitline drivers and high-VTHP latches. von Chua-Chin Wang

    Artikel

    A 4-kB 500-MHz 4-T CMOS SRAM using low-VTHN bitline drivers and high-VTHP latches.

Suchwerkzeuge: