Treffer 2.361 - 2.370 von 2.512 für Suche '"N."', Suchdauer: 0,02s Treffer weiter einschränken
  1. 2361

    A 1-MHZ bandwidth 3.6-GHz 0.18-μm CMOS fractional-N synthesizer utilizing a hybrid PFD von Meninger, S.E

    Artikel

    A 1-MHZ bandwidth 3.6-GHz 0.18-μm CMOS fractional-N synthesizer utilizing a hybrid PFD
  2. 2362

    On the message and time complexity of protocols for reliable broadcasts von Hong-Yi Tzeng

    Artikel

    On the message and time complexity of protocols for reliable broadcasts
  3. 2363

    The effect of bandwidth allocation policies on delay in unidirectional bus networks. von Manjunath, D.

    Artikel

    The effect of bandwidth allocation policies on delay in unidirectional bus networks.
  4. 2364

    Schön shown the door [electronics research investigation]. von Hellemans, A.

    Veröffentlicht in IEEE spectrum
    Artikel

    Schön shown the door [electronics research investigation].
  5. 2365

    Control-on-demand an efficient approach to router programmability. von Hjalmtysson, G.

    Artikel

    Control-on-demand an efficient approach to router programmability.
  6. 2366

    The toughest transistor yet [GaN transistors]. von Eastman, L.F

    Veröffentlicht in IEEE spectrum
    Artikel

    The toughest transistor yet [GaN transistors].
  7. 2367

    An electronically switchable leaky wave antenna. von Limin Huang

    Artikel

    An electronically switchable leaky wave antenna.
  8. 2368

    Earth day gadgets (Part II). IN IT matters [column]. von Amadora, Len

    Veröffentlicht in Manila bulletin
    Artikel

    Earth day gadgets (Part II). IN IT matters [column].
  9. 2369

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. von Tsung-Hsing Yu

    Artikel

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  10. 2370

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. von Nieh, R.E

    Artikel

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

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