Sökresultat - "Modelling."

9581

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. av Meneghesso, G.

I publikationen IEEE Transactions on electron devices

Artikel

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.

9582

The effects of nonlocal impact ionization on the speed of avalanche photodiodes. av Hambleton, P.J

I publikationen IEEE Transactions on electron devices

Artikel

The effects of nonlocal impact ionization on the speed of avalanche photodiodes.

9583

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. av Lallement, C.

I publikationen IEEE Transactions on electron devices

Artikel

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.

9584

Maximum-likelihood estimation of FIR channels excited by convolutionally encoded inputs. av Cirpan, H.A

I publikationen IEEE Transactions on communications

Artikel

Maximum-likelihood estimation of FIR channels excited by convolutionally encoded inputs.

9585

Network heavy traffic modeling using α-stable self-similar processes. av Karasaridis, A.

I publikationen IEEE Transactions on communications

Artikel

Network heavy traffic modeling using α-stable self-similar processes.

9586

A compact analytical model for asymmetric single-electron tunneling transistors. av Inokawa, H.

I publikationen IEEE Transactions on electron devices

Artikel

A compact analytical model for asymmetric single-electron tunneling transistors.

9587

Impact ionization measurements and modeling for power PHEMT. av Baksht, T.

I publikationen IEEE Transactions on electron devices

Artikel

Impact ionization measurements and modeling for power PHEMT.

9588

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. av Domeij, M.

I publikationen IEEE Transactions on electron devices

Artikel

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche.

9589

A low-cost uncooled infrared microbolometer detector in standard CMOS technology. av Tezcan, D.S

I publikationen IEEE Transactions on electron devices

Artikel

A low-cost uncooled infrared microbolometer detector in standard CMOS technology.

9590

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications. av Kong-Beng Thei

I publikationen IEEE Transactions on electron devices

Artikel

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. av Meneghesso, G.

The effects of nonlocal impact ionization on the speed of avalanche photodiodes. av Hambleton, P.J

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. av Lallement, C.

Maximum-likelihood estimation of FIR channels excited by convolutionally encoded inputs. av Cirpan, H.A

Network heavy traffic modeling using α-stable self-similar processes. av Karasaridis, A.

A compact analytical model for asymmetric single-electron tunneling transistors. av Inokawa, H.

Impact ionization measurements and modeling for power PHEMT. av Baksht, T.

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. av Domeij, M.

A low-cost uncooled infrared microbolometer detector in standard CMOS technology. av Tezcan, D.S

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications. av Kong-Beng Thei

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