10,831 - 10,840 toradh á dtaispeáint as 11,409 toradh san iomlán ar an gcuardach '"Modelling."', am iarratais: 0.04s Beachtaigh na torthaí
  1. 10831

    An instruction-level energy model for embedded VLIW architectures. de réir Sami, M.

    Alt

    An instruction-level energy model for embedded VLIW architectures.
  2. 10832

    Symbolic modeling of periodically time-varying systems using harmonic transfer matrices. de réir Vanassche, P.

    Alt

    Symbolic modeling of periodically time-varying systems using harmonic transfer matrices.
  3. 10833

    High-level energy macromodeling of embedded software. de réir Tat Kee Tan

    Alt

    High-level energy macromodeling of embedded software.
  4. 10834

    Table look-up model of thin-film transistors for circuit simulation using spline interpolation with transformation by y x+log(x). de réir Kimura, M.

    Alt

    Table look-up model of thin-film transistors for circuit simulation using spline interpolation with transformation by y x+log(x).
  5. 10835

    A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors. de réir Anwar, A.F.M

    Alt

    A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors.
  6. 10836

    Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs. de réir Mitani, Y.

    Alt

    Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs.
  7. 10837

    Optimization of power control parameters for DS-CDMA cellular systems. de réir Abrardo, A.

    Alt

    Optimization of power control parameters for DS-CDMA cellular systems.
  8. 10838

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. de réir Yang-Yu Fan

    Alt

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance.
  9. 10839

    A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation. de réir Winstead, B.

    Alt

    A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation.
  10. 10840

    A compact analytical model for asymmetric single-electron tunneling transistors. de réir Inokawa, H.

    Alt

    A compact analytical model for asymmetric single-electron tunneling transistors.

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