Prikaz rezultata 51 – 60 od 79 za pretragu '"InGaAs."', vrijeme upita: 0,01s Detaljiziraj rezultate
  1. 51

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. od Ming-Kwen Tsai

    Članak

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.
  2. 52

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. od Sawada, K.

    Članak

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
  3. 53

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. od Tsung-Hsing Yu

    Članak

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  4. 54

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. od Meneghesso, G.

    Članak

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.
  5. 55

    Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes. od Palenskis, V.

    Članak

    Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes.
  6. 56

    Si and Zn co-doped InGaN-GaN white light-emitting diodes. od Chang, S.J

    Članak

    Si and Zn co-doped InGaN-GaN white light-emitting diodes.
  7. 57

    Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors. od Ravi, M.R

    Članak

    Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors.
  8. 58

    Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N od Kuo, C.H

    Članak

    Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N
  9. 59

    Efficient model fitting using a genetic algorithm pole-zero approximations of HRTFs. od Durant, E.A

    Članak

    Efficient model fitting using a genetic algorithm pole-zero approximations of HRTFs.
  10. 60

    Lasers get the green light. od Stevenson, R.

    Izdano u IEEE spectrum
    Članak

    Lasers get the green light.

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