Search Results - "InAlAs."

391

An industrial systems design study on Al-Ren Shoes by Manaloto, Joyce Abigail B., Quitadio, Queenie Ane A., Sacramento, Gerard Edison B., Senina, Anthony Dale DR

Thesis

392

High-power monolithic AlGaN by Kaper, V.S

Published in IEEE Journal of solid state circuits

Article

393

High speed storage area networks using a fibre channel arbitrated loop interconnect. by Heath, J.R

Published in IEEE Network : the magazine of global information exchange

Article

High speed storage area networks using a fibre channel arbitrated loop interconnect.

394

Leaking capacitors muck up motherboards. by Yu-Tzu Chiu

Published in IEEE spectrum

Article

Leaking capacitors muck up motherboards.

395

Adjustable multilayer HTS filters. by Kouth Chen

Published in IEEE Transactions on applied superconductivity

Article

396

Interface-engineered Josephson junctions optimized for high JC. by Shimakage, H.

Published in IEEE Transactions on applied superconductivity

Article

Interface-engineered Josephson junctions optimized for high JC.

397

Room-temperature testing for high critical-current-density Josephson junctions. by O'Hara, M.J

Published in IEEE Transactions on applied superconductivity

Article

Room-temperature testing for high critical-current-density Josephson junctions.

398

S-Cam A cryogenic camera for optical astronomy based on superconducting tunnel junctions. by Rando, N.

Published in IEEE Transactions on applied superconductivity

Article

S-Cam A cryogenic camera for optical astronomy based on superconducting tunnel junctions.

399

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. by Ming-Kwen Tsai

Published in IEEE Transactions on electron devices

Article

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.

400

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. by Tsung-Hsing Yu

Published in IEEE Transactions on electron devices

Article

An industrial systems design study on Al-Ren Shoes by Manaloto, Joyce Abigail B., Quitadio, Queenie Ane A., Sacramento, Gerard Edison B., Senina, Anthony Dale DR

High-power monolithic AlGaN by Kaper, V.S

High speed storage area networks using a fibre channel arbitrated loop interconnect. by Heath, J.R

Leaking capacitors muck up motherboards. by Yu-Tzu Chiu

Adjustable multilayer HTS filters. by Kouth Chen

Interface-engineered Josephson junctions optimized for high JC. by Shimakage, H.

Room-temperature testing for high critical-current-density Josephson junctions. by O'Hara, M.J

S-Cam A cryogenic camera for optical astronomy based on superconducting tunnel junctions. by Rando, N.

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. by Ming-Kwen Tsai

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. by Tsung-Hsing Yu

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