IEEE transactions on electron devices.

IEEE Transactions on electron devices.

Available for University of the Philippines Diliman via IEEE Xplore Digital Library . Click here toaccess

Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. per Sghaier, N.

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. per Ming-Kwen Tsai

Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. per Sawada, K.

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. per Tsung-Hsing Yu

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. per Meneghesso, G.

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. per Nieh, R.E

Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications. per Sen-Shyong Fann

The effects of nonlocal impact ionization on the speed of avalanche photodiodes. per Hambleton, P.J