Erakusten 61 - 70 emaitzak -- 84 bilaketa honetara '"IEEE Transactions on electron devices"', Bilaketaren denbora: 0,02s Findu emaitzak
  1. 61

    Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. nork Bufler, F.M

    Artikulua

    Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.
  2. 62

    Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs. nork Mitani, Y.

    Artikulua

    Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs.
  3. 63

    The origins of leaky characteristics of Schottky diodes on p-GaN. nork Yu, L.S

    Artikulua

    The origins of leaky characteristics of Schottky diodes on p-GaN.
  4. 64

    Monte Carlo simulation and measurement of nanoscale n-MOSFETs. nork Bufler, F.M

    Artikulua

    Monte Carlo simulation and measurement of nanoscale n-MOSFETs.
  5. 65

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy nork Singh, D.V

    Artikulua

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy
  6. 66

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. nork Yang-Yu Fan

    Artikulua

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance.
  7. 67

    A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation. nork Winstead, B.

    Artikulua

    A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation.
  8. 68

    Impact-ionization-assisted intermediate band solar cell. nork Luque, A.

    Artikulua

    Impact-ionization-assisted intermediate band solar cell.
  9. 69

    A compact analytical model for asymmetric single-electron tunneling transistors. nork Inokawa, H.

    Artikulua

    A compact analytical model for asymmetric single-electron tunneling transistors.
  10. 70

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. nork Inokawa, H.

    Artikulua

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.

Bilaketa egiteko lanabesak: