Visas 61 - 70 av 84 resultat för sökning '"IEEE Transactions on electron devices"', Sökningstid: 0,02s Förfina resultatet
  1. 61

    Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. av Bufler, F.M

    Artikel

    Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.
  2. 62

    Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs. av Mitani, Y.

    Artikel

    Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs.
  3. 63

    The origins of leaky characteristics of Schottky diodes on p-GaN. av Yu, L.S

    Artikel

    The origins of leaky characteristics of Schottky diodes on p-GaN.
  4. 64

    Monte Carlo simulation and measurement of nanoscale n-MOSFETs. av Bufler, F.M

    Artikel

    Monte Carlo simulation and measurement of nanoscale n-MOSFETs.
  5. 65

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy av Singh, D.V

    Artikel

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy
  6. 66

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. av Yang-Yu Fan

    Artikel

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance.
  7. 67

    A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation. av Winstead, B.

    Artikel

    A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation.
  8. 68

    Impact-ionization-assisted intermediate band solar cell. av Luque, A.

    Artikel

    Impact-ionization-assisted intermediate band solar cell.
  9. 69

    A compact analytical model for asymmetric single-electron tunneling transistors. av Inokawa, H.

    Artikel

    A compact analytical model for asymmetric single-electron tunneling transistors.
  10. 70

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. av Inokawa, H.

    Artikel

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.

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