Search Results - "IEEE Transactions on electron devices"

21

A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. by Inokawa, H.

Published in IEEE Transactions on electron devices

Article

A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.

22

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Published in IEEE Transactions on electron devices

Article

Development of high-current 4H-SiC ACCUFET.

23

Impact ionization measurements and modeling for power PHEMT. by Baksht, T.

Published in IEEE Transactions on electron devices

Article

Impact ionization measurements and modeling for power PHEMT.

24

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. by Domeij, M.

Published in IEEE Transactions on electron devices

Article

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche.

25

A low-cost uncooled infrared microbolometer detector in standard CMOS technology. by Tezcan, D.S

Published in IEEE Transactions on electron devices

Article

A low-cost uncooled infrared microbolometer detector in standard CMOS technology.

26

A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors. by Melvas, P.

Published in IEEE Transactions on electron devices

Article

A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors.

27

Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. by Dong-Won Kim

Published in IEEE Transactions on electron devices

Article

Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.

28

Impurity profile effects of buffer layer on PT-IGBT characteristics. by Chung-Hee Kim

Published in IEEE Transactions on electron devices

Article

29

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications. by Kong-Beng Thei

Published in IEEE Transactions on electron devices

Article

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications.

30

Si and Zn co-doped InGaN-GaN white light-emitting diodes. by Chang, S.J

Published in IEEE Transactions on electron devices

Article

A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. by Inokawa, H.

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Impact ionization measurements and modeling for power PHEMT. by Baksht, T.

On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. by Domeij, M.

A low-cost uncooled infrared microbolometer detector in standard CMOS technology. by Tezcan, D.S

A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors. by Melvas, P.

Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. by Dong-Won Kim

Impurity profile effects of buffer layer on PT-IGBT characteristics. by Chung-Hee Kim

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications. by Kong-Beng Thei

Si and Zn co-doped InGaN-GaN white light-emitting diodes. by Chang, S.J

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