Εμφανίζονται 21 - 30 Αποτελέσματα από 84 για την αναζήτηση '"IEEE Transactions on electron devices"', χρόνος αναζήτησης: 0,02δλ Περιορισμός αποτελεσμάτων
  1. 21

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. ανά Inokawa, H.

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.
  2. 22

    Development of high-current 4H-SiC ACCUFET. ανά Singh, R.

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    Development of high-current 4H-SiC ACCUFET.
  3. 23

    Impact ionization measurements and modeling for power PHEMT. ανά Baksht, T.

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    Impact ionization measurements and modeling for power PHEMT.
  4. 24

    On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. ανά Domeij, M.

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche.
  5. 25

    A low-cost uncooled infrared microbolometer detector in standard CMOS technology. ανά Tezcan, D.S

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    A low-cost uncooled infrared microbolometer detector in standard CMOS technology.
  6. 26

    A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors. ανά Melvas, P.

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors.
  7. 27

    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. ανά Dong-Won Kim

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.
  8. 28

    Impurity profile effects of buffer layer on PT-IGBT characteristics. ανά Chung-Hee Kim

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    Impurity profile effects of buffer layer on PT-IGBT characteristics.
  9. 29

    A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications. ανά Kong-Beng Thei

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications.
  10. 30

    Si and Zn co-doped InGaN-GaN white light-emitting diodes. ανά Chang, S.J

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    Si and Zn co-doped InGaN-GaN white light-emitting diodes.

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