Näytetään 21 - 30 yhteensä 84 tuloksesta haulle '"IEEE Transactions on electron devices"', hakuaika: 0,02s Tarkenna hakua
  1. 21

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. Tekijä Inokawa, H.

    Artikkeli

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.
  2. 22

    Development of high-current 4H-SiC ACCUFET. Tekijä Singh, R.

    Artikkeli

    Development of high-current 4H-SiC ACCUFET.
  3. 23

    Impact ionization measurements and modeling for power PHEMT. Tekijä Baksht, T.

    Artikkeli

    Impact ionization measurements and modeling for power PHEMT.
  4. 24

    On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. Tekijä Domeij, M.

    Artikkeli

    On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche.
  5. 25

    A low-cost uncooled infrared microbolometer detector in standard CMOS technology. Tekijä Tezcan, D.S

    Artikkeli

    A low-cost uncooled infrared microbolometer detector in standard CMOS technology.
  6. 26

    A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors. Tekijä Melvas, P.

    Artikkeli

    A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensors.
  7. 27

    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. Tekijä Dong-Won Kim

    Artikkeli

    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.
  8. 28

    Impurity profile effects of buffer layer on PT-IGBT characteristics. Tekijä Chung-Hee Kim

    Artikkeli

    Impurity profile effects of buffer layer on PT-IGBT characteristics.
  9. 29

    A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications. Tekijä Kong-Beng Thei

    Artikkeli

    A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications.
  10. 30

    Si and Zn co-doped InGaN-GaN white light-emitting diodes. Tekijä Chang, S.J

    Artikkeli

    Si and Zn co-doped InGaN-GaN white light-emitting diodes.

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