Erakusten 11 - 20 emaitzak -- 84 bilaketa honetara '"IEEE Transactions on electron devices"', Bilaketaren denbora: 0,02s Findu emaitzak
  1. 11

    UV-responsive CCD image sensors with enhanced inorganic phosphor coatings. nork Franks, W.A.R

    Artikulua

    UV-responsive CCD image sensors with enhanced inorganic phosphor coatings.
  2. 12

    Improvement of color temperature using independent control of red, green, blue luminance in AC plasma display panel. nork Ki-Duck Cho

    Artikulua

    Improvement of color temperature using independent control of red, green, blue luminance in AC plasma display panel.
  3. 13

    Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes. nork Palenskis, V.

    Artikulua

    Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes.
  4. 14

    Hot-hole-induced dielectric breakdown in LDMOS transistors. nork Labate, L.

    Artikulua

    Hot-hole-induced dielectric breakdown in LDMOS transistors.
  5. 15

    A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. nork Jongdae Kim

    Artikulua

    A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.
  6. 16

    Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. nork Onishi, K.

    Artikulua

    Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing.
  7. 17

    Threshold voltage-related soft error degradation in a TFT SRAM cell. nork Ikeda, S.

    Artikulua

    Threshold voltage-related soft error degradation in a TFT SRAM cell.
  8. 18

    Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process. nork Ming-Dou Ker

    Artikulua

    Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process.
  9. 19

    Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. nork Lallement, C.

    Artikulua

    Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.
  10. 20

    A compact analytical model for asymmetric single-electron tunneling transistors. nork Inokawa, H.

    Artikulua

    A compact analytical model for asymmetric single-electron tunneling transistors.

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