Search Results - "Gate oxides."

1

A CMOS switched transconductor mixer. by Klumperink, E.A.M

Published in IEEE Journal of solid state circuits

Article

2

The incredible shrinking transistor. by Taur, Y.

Published in IEEE spectrum

Article

3

Hot-hole-induced dielectric breakdown in LDMOS transistors. by Labate, L.

Published in IEEE Transactions on electron devices

Article

Hot-hole-induced dielectric breakdown in LDMOS transistors.

4

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. by Jongdae Kim

Published in IEEE Transactions on electron devices

Article

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.

5

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. by Lallement, C.

Published in IEEE Transactions on electron devices

Article

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.

6

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Published in IEEE Transactions on electron devices

Article

Development of high-current 4H-SiC ACCUFET.

7

The amazing vanishing transistor act. by Geppert, L.

Published in IEEE spectrum

Article

8

The amazing vanishing transistor act. by Geppert, L.

Published in IEEE spectrum

Article

9

A 69-mW 10-bit 80-MSample by Byung-Moo Min

Published in IEEE Journal of solid state circuits

Article

10

Delay and power monitoring schemes for minimizing power consumption by means of supply and threshold voltage control in active and standby modes. by Nomura, M.

Published in IEEE Journal of solid state circuits

Article

A CMOS switched transconductor mixer. by Klumperink, E.A.M

The incredible shrinking transistor. by Taur, Y.

Hot-hole-induced dielectric breakdown in LDMOS transistors. by Labate, L.

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. by Jongdae Kim

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. by Lallement, C.

Development of high-current 4H-SiC ACCUFET. by Singh, R.

The amazing vanishing transistor act. by Geppert, L.

The amazing vanishing transistor act. by Geppert, L.

A 69-mW 10-bit 80-MSample by Byung-Moo Min

Delay and power monitoring schemes for minimizing power consumption by means of supply and threshold voltage control in active and standby modes. by Nomura, M.

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