-
11
-
12
Gate oxide leakage and delay tradeoffs for dual-Tox circuits.
الحاوية / القاعدة IEEE Transactions on VLSI systemsمقال -
13
-
14
-
15
Development of high-current 4H-SiC ACCUFET.
الحاوية / القاعدة IEEE Transactions on electron devicesمقال -
16