Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy by Somintac, Armando S.

Growth and electrical characterization of liquid phase epitaxial gallium arsenide and heterojunctions by Laniog, Jean Naldo

Compound semiconductors 1994 proceedings of the Twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994

Gallium arsenide IC applications handbook

Microwave field-effect transistors theory, design, and applications by Pengelly, Raymond S. (Raymond Sydney) 1948-

Available for University of the Philippines Diliman via IET Digital Library. Click here to access
Also available remotely for University of the Philippines Diliman via IET Digital Library. Click here to access thru EZproxy

Gaas high-speed devices physics, technology, and circuit applications. by Chang, C. Y., 1937-

VLSI fabrication principles silicon and gallium arsenide by Ghandhi, Sorab Khushro 1928-

Semi-insulating III-V materials, Warsaw, Poland, 1994 proceedings of the 8th conference on semi-insulating III-V Materials, Warsaw, Poland, June 6-10, 1994

An introduction to GaAs IC design by Harrold, S. J.

Gas source molecular beam epitaxy growth and properties of phosphorus containing III-V heterostructures by Panish, M. B.