Mostrando 51 - 60 Resultados de 79 Para Buscar '"GaAs."', tiempo de consulta: 0.02s Limitar resultados
  1. 51

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. por Ming-Kwen Tsai

    Artículo

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.
  2. 52

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. por Sawada, K.

    Artículo

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
  3. 53

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. por Tsung-Hsing Yu

    Artículo

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  4. 54

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. por Meneghesso, G.

    Artículo

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.
  5. 55

    Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes. por Palenskis, V.

    Artículo

    Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes.
  6. 56

    Si and Zn co-doped InGaN-GaN white light-emitting diodes. por Chang, S.J

    Artículo

    Si and Zn co-doped InGaN-GaN white light-emitting diodes.
  7. 57

    Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors. por Ravi, M.R

    Artículo

    Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors.
  8. 58

    Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N por Kuo, C.H

    Artículo

    Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N
  9. 59

    Efficient model fitting using a genetic algorithm pole-zero approximations of HRTFs. por Durant, E.A

    Artículo

    Efficient model fitting using a genetic algorithm pole-zero approximations of HRTFs.
  10. 60

    Lasers get the green light. por Stevenson, R.

    Publicado en IEEE spectrum
    Artículo

    Lasers get the green light.

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