A 40-GHz-bandwidth, 4-bit, time-interleaved A by Nathawad, L.Y

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. by Ming-Kwen Tsai

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. by Meneghesso, G.

Minings best practices showcased by Adorador, Danilo V., III

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Sen. Legarda pushes for accountability of people building sub-standard housing projects. IN Visayas News by Casayuran, Mario B.

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Clarified auditing standards The quiet revolution. by Morris, Jan Taylor

Indirect adaptive control of reactive ion etching using neural networks. by Stokes, D.

A simplified model for the effect of interfinger metal on maximum temperature rise in a multifinger bipolar transistor. by Walkey, D.J

Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs. by Mitani, Y.