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51

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. by Ming-Kwen Tsai

Published in IEEE Transactions on electron devices

Article

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.

52

Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. by Sawada, K.

Published in IEEE Transactions on electron devices

Article

Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.

53

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. by Tsung-Hsing Yu

Published in IEEE Transactions on electron devices

Article

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.

54

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. by Meneghesso, G.

Published in IEEE Transactions on electron devices

Article

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.

55

Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes. by Palenskis, V.

Published in IEEE Transactions on electron devices

Article

Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes.

56

Si and Zn co-doped InGaN-GaN white light-emitting diodes. by Chang, S.J

Published in IEEE Transactions on electron devices

Article

Si and Zn co-doped InGaN-GaN white light-emitting diodes.

57

Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors. by Ravi, M.R

Published in IEEE Transactions on electron devices

Article

Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors.

58

Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N by Kuo, C.H

Published in IEEE Transactions on electron devices

Article

Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N

59

Efficient model fitting using a genetic algorithm pole-zero approximations of HRTFs. by Durant, E.A

Published in IEEE Transactions on speech and audio processing

Article

Efficient model fitting using a genetic algorithm pole-zero approximations of HRTFs.

60

Lasers get the green light. by Stevenson, R.

Published in IEEE spectrum

Article

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. by Ming-Kwen Tsai

Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. by Sawada, K.

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. by Tsung-Hsing Yu

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. by Meneghesso, G.

Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes. by Palenskis, V.

Si and Zn co-doped InGaN-GaN white light-emitting diodes. by Chang, S.J

Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors. by Ravi, M.R

Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N by Kuo, C.H

Efficient model fitting using a genetic algorithm pole-zero approximations of HRTFs. by Durant, E.A

Lasers get the green light. by Stevenson, R.

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