Impurity doping processes in silicon

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Characterization of silicon P-N junctions fabricated by ion shower doping by Diaz, Jose Mario A.

The incredible shrinking transistor. by Taur, Y.

Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. by Heitzinger, C.

Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. by Sghaier, N.

Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. by Sawada, K.

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. by Nieh, R.E

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. by Lallement, C.

Si and Zn co-doped InGaN-GaN white light-emitting diodes. by Chang, S.J

Accurate Prediction of Substrate Parasitics in Heavily Doped CMOS Processes Using a Calibrated Boundary Element Solver. by Sharma, A.