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11
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12
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13
Development of high-current 4H-SiC ACCUFET.
Published in IEEE Transactions on electron devicesArticle -
14
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15
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16
Design and performance testing of a 2.29-GB
Published in IEEE Journal of solid state circuitsArticle -
17
Development of high-current 4H-SiC ACCUFET.
Published in IEEE Transactions on electron devicesArticle -
18


