Отображение 291 - 300 результаты of 343 для поиска '"Dependency."', время запроса: 0.02сек. Отмена результатов
  1. 291

    Measurement of the coherence length of sputtered Nb0.62Ti0.38N thin films. по Lei Yu

    Опубликовано в: IEEE Transactions on applied superconductivity
    Статья

    Measurement of the coherence length of sputtered Nb0.62Ti0.38N thin films.
  2. 292

    Temperature and magnetic field dependence of the critical current density for a mass-produced Nb3Al multifilamentary strand fabricated by a jelly-roll method [for ITER]. по Takahashi, Y.

    Опубликовано в: IEEE Transactions on applied superconductivity
    Статья

    Temperature and magnetic field dependence of the critical current density for a mass-produced Nb3Al multifilamentary strand fabricated by a jelly-roll method [for ITER].
  3. 293

    Constrained maximum-likelihood detection in CDMA. по Peng Hui Tan

    Опубликовано в: IEEE Transactions on communications
    Статья

    Constrained maximum-likelihood detection in CDMA.
  4. 294

    An analytic Volterra-series-based model for a MEMS variable capacitor. по Innocent, M.

    Статья

    An analytic Volterra-series-based model for a MEMS variable capacitor.
  5. 295

    CMOS circuit verification with symbolic switch-level timing simulation. по McDonald, C.B

    Статья

    CMOS circuit verification with symbolic switch-level timing simulation.
  6. 296

    A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors. по Anwar, A.F.M

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors.
  7. 297

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy по Singh, D.V

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy
  8. 298

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors. по Inokawa, H.

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.
  9. 299

    Impact ionization measurements and modeling for power PHEMT. по Baksht, T.

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Impact ionization measurements and modeling for power PHEMT.
  10. 300

    Delay-Dependent Stability Analysis and Controller Synthesis for Discrete-Time T?S Fuzzy Systems With Time Delays. по Cai-Lian Chen

    Опубликовано в: IEEE Transactions on fuzzy systems
    Статья

    Delay-Dependent Stability Analysis and Controller Synthesis for Discrete-Time T?S Fuzzy Systems With Time Delays.

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