Search Results - "Currents"

691

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. by Tsung-Hsing Yu

Published in IEEE Transactions on electron devices

Article

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.

692

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. by Meneghesso, G.

Published in IEEE Transactions on electron devices

Article

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.

693

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. by Nieh, R.E

Published in IEEE Transactions on electron devices

Article

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

694

Hot-hole-induced dielectric breakdown in LDMOS transistors. by Labate, L.

Published in IEEE Transactions on electron devices

Article

Hot-hole-induced dielectric breakdown in LDMOS transistors.

695

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. by Jongdae Kim

Published in IEEE Transactions on electron devices

Article

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.

696

Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. by Onishi, K.

Published in IEEE Transactions on electron devices

Article

Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing.

697

Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process. by Ming-Dou Ker

Published in IEEE Transactions on electron devices

Article

Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process.

698

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. by Lallement, C.

Published in IEEE Transactions on electron devices

Article

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.

699

A compact analytical model for asymmetric single-electron tunneling transistors. by Inokawa, H.

Published in IEEE Transactions on electron devices

Article

A compact analytical model for asymmetric single-electron tunneling transistors.

700

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Published in IEEE Transactions on electron devices

Article

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. by Tsung-Hsing Yu

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. by Meneghesso, G.

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. by Nieh, R.E

Hot-hole-induced dielectric breakdown in LDMOS transistors. by Labate, L.

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. by Jongdae Kim

Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. by Onishi, K.

Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process. by Ming-Dou Ker

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. by Lallement, C.

A compact analytical model for asymmetric single-electron tunneling transistors. by Inokawa, H.

Development of high-current 4H-SiC ACCUFET. by Singh, R.

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