Treffer 691 - 700 von 921 für Suche '"Current."', Suchdauer: 0,02s Treffer weiter einschränken
  1. 691

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. von Tsung-Hsing Yu

    Artikel

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  2. 692

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. von Meneghesso, G.

    Artikel

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.
  3. 693

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. von Nieh, R.E

    Artikel

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.
  4. 694

    Hot-hole-induced dielectric breakdown in LDMOS transistors. von Labate, L.

    Artikel

    Hot-hole-induced dielectric breakdown in LDMOS transistors.
  5. 695

    A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. von Jongdae Kim

    Artikel

    A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.
  6. 696

    Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. von Onishi, K.

    Artikel

    Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing.
  7. 697

    Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process. von Ming-Dou Ker

    Artikel

    Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process.
  8. 698

    Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. von Lallement, C.

    Artikel

    Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.
  9. 699

    A compact analytical model for asymmetric single-electron tunneling transistors. von Inokawa, H.

    Artikel

    A compact analytical model for asymmetric single-electron tunneling transistors.
  10. 700

    Development of high-current 4H-SiC ACCUFET. von Singh, R.

    Artikel

    Development of high-current 4H-SiC ACCUFET.

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