Search Results - "Current"

861

A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors. by Anwar, A.F.M

Published in IEEE Transactions on electron devices

Article

A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors.

862

Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. by Bufler, F.M

Published in IEEE Transactions on electron devices

Article

Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.

863

Monte Carlo simulation and measurement of nanoscale n-MOSFETs. by Bufler, F.M

Published in IEEE Transactions on electron devices

Article

Monte Carlo simulation and measurement of nanoscale n-MOSFETs.

864

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy by Singh, D.V

Published in IEEE Transactions on electron devices

Article

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy

865

Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. by Yang-Yu Fan

Published in IEEE Transactions on electron devices

Article

Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance.

866

A compact analytical model for asymmetric single-electron tunneling transistors. by Inokawa, H.

Published in IEEE Transactions on electron devices

Article

A compact analytical model for asymmetric single-electron tunneling transistors.

867

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Published in IEEE Transactions on electron devices

Article

Development of high-current 4H-SiC ACCUFET.

868

Impact ionization measurements and modeling for power PHEMT. by Baksht, T.

Published in IEEE Transactions on electron devices

Article

Impact ionization measurements and modeling for power PHEMT.

869

Amorphous silicon active pixel sensor readout circuit for digital imaging. by Karim, K.S

Published in IEEE Transactions on electron devices

Article

Amorphous silicon active pixel sensor readout circuit for digital imaging.

870

Ag-GaP Schottky photodiodes for UV sensors. by Pikhtin, A.N

Published in IEEE Transactions on electron devices

Article

A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors. by Anwar, A.F.M

Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. by Bufler, F.M

Monte Carlo simulation and measurement of nanoscale n-MOSFETs. by Bufler, F.M

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy by Singh, D.V

Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. by Yang-Yu Fan

A compact analytical model for asymmetric single-electron tunneling transistors. by Inokawa, H.

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Impact ionization measurements and modeling for power PHEMT. by Baksht, T.

Amorphous silicon active pixel sensor readout circuit for digital imaging. by Karim, K.S

Ag-GaP Schottky photodiodes for UV sensors. by Pikhtin, A.N

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