Search Results - "Breakdowns."

11

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. by Meneghesso, G.

Published in IEEE Transactions on electron devices

Article

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.

12

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. by Nieh, R.E

Published in IEEE Transactions on electron devices

Article

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

13

Hot-hole-induced dielectric breakdown in LDMOS transistors. by Labate, L.

Published in IEEE Transactions on electron devices

Article

Hot-hole-induced dielectric breakdown in LDMOS transistors.

14

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. by Jongdae Kim

Published in IEEE Transactions on electron devices

Article

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.

15

Impact ionization measurements and modeling for power PHEMT. by Baksht, T.

Published in IEEE Transactions on electron devices

Article

Impact ionization measurements and modeling for power PHEMT.

16

Si and Zn co-doped InGaN-GaN white light-emitting diodes. by Chang, S.J

Published in IEEE Transactions on electron devices

Article

Si and Zn co-doped InGaN-GaN white light-emitting diodes.

17

Phase-time analysis of the leakage impulse current of faulty line-post pin insulators. by Kim, C.J

Published in IEEE Transactions on power delivery

Article

Phase-time analysis of the leakage impulse current of faulty line-post pin insulators.

18

Speed bumps ahead for electric-vehicle charging. by Fairley, P.

Published in IEEE spectrum

Article

Speed bumps ahead for electric-vehicle charging.

19

The toughest transistor yet [GaN transistors]. by Eastman, L.F

Published in IEEE spectrum

Article

The toughest transistor yet [GaN transistors].

20

The Breakdown of coordinated decision making in distributed systems by Bearman, Christopher

Published in Human Factors: The Journal of the Human Factors and Ergonomics Society

Article

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. by Meneghesso, G.

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. by Nieh, R.E

Hot-hole-induced dielectric breakdown in LDMOS transistors. by Labate, L.

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. by Jongdae Kim

Impact ionization measurements and modeling for power PHEMT. by Baksht, T.

Si and Zn co-doped InGaN-GaN white light-emitting diodes. by Chang, S.J

Phase-time analysis of the leakage impulse current of faulty line-post pin insulators. by Kim, C.J

Speed bumps ahead for electric-vehicle charging. by Fairley, P.

The toughest transistor yet [GaN transistors]. by Eastman, L.F

The Breakdown of coordinated decision making in distributed systems by Bearman, Christopher

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