Отображение 1 - 10 результаты of 16 для поиска '"1.5 V."', время запроса: 0.06сек. Отмена результатов
  1. 1

    Low-voltage high-speed switched-capacitor circuits without voltage bootstrapper. по Lei Wang

    Опубликовано в: IEEE Journal of solid state circuits
    Статья

    Low-voltage high-speed switched-capacitor circuits without voltage bootstrapper.
  2. 2

    A 1.5-V 14-bit 100-MS по Yonghua Cong

    Опубликовано в: IEEE Journal of solid state circuits
    Статья

    A 1.5-V 14-bit 100-MS
  3. 3

    A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-μm CMOS. по Rogin, J.

    Опубликовано в: IEEE Journal of solid state circuits
    Статья

    A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-μm CMOS.
  4. 4

    A 2-GHz carrier leakage calibrated direct-conversion WCDMA transmitter in 0.13-μm CMOS. по Brenna, G.

    Опубликовано в: IEEE Journal of solid state circuits
    Статья

    A 2-GHz carrier leakage calibrated direct-conversion WCDMA transmitter in 0.13-μm CMOS.
  5. 5

    Development of high-current 4H-SiC ACCUFET. по Singh, R.

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Development of high-current 4H-SiC ACCUFET.
  6. 6

    Power-delay product minimization in high-performance 64-bit carry-select adders. по Neve, A.

    Опубликовано в: IEEE Transactions on VLSI systems
    Статья

    Power-delay product minimization in high-performance 64-bit carry-select adders.
  7. 7

    A 1.5-V 75-dB dynamic range third-order Gm-C filter integrated in a 0.18-μm standard digital CMOS process. по Yodprasit, U.

    Опубликовано в: IEEE Journal of solid state circuits
    Статья

    A 1.5-V 75-dB dynamic range third-order Gm-C filter integrated in a 0.18-μm standard digital CMOS process.
  8. 8

    A subpicosecond jitter PLL for clock generation in 0.12-μm digital CMOS. по Da Dalt, N.

    Опубликовано в: IEEE Journal of solid state circuits
    Статья

    A subpicosecond jitter PLL for clock generation in 0.12-μm digital CMOS.
  9. 9

    A 1.5-V 12-bit power-efficient continuous-time third-order ΣΔ modulator. по Gerfers, F.

    Опубликовано в: IEEE Journal of solid state circuits
    Статья

    A 1.5-V 12-bit power-efficient continuous-time third-order ΣΔ modulator.
  10. 10

    MOS varactors with n- and p-type gates and their influence on an LC-VCO in digital CMOS. по Maget, J.

    Опубликовано в: IEEE Journal of solid state circuits
    Статья

    MOS varactors with n- and p-type gates and their influence on an LC-VCO in digital CMOS.

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