Influence of uni and bi-modal SiC composition on mechanical properties and microstructure of reaction-bonded SiC ceramics. по Jang, Byung-Koog

The carbon black effect on crack formation during pyrolysis step in liquid silicon infiltration process for Cf по Kim, Se-young

Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. по Sghaier, N.

Development of high-current 4H-SiC ACCUFET. по Singh, R.

SiC power diodes provide breakthrough performance for a wide range of applications. по Hefner, A.R., Jr

Characterization and comparison of SiC Schottky and ultra-fast diodes in a hard-switching buck converter по Libby, Rochie Ligaya S.

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Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy по Singh, D.V

Development of high-current 4H-SiC ACCUFET. по Singh, R.