Mostra 1 - 3 risultati di 3 ricerca '"High electron mobility transistors."', tempo di risposta: 0,02s Raffina i risultati
  1. 1

    Indium phosphide ICs unleash the high-frequency spectrum. di Raghavan, G.

    Pubblicato in IEEE spectrum
    Articolo

    Indium phosphide ICs unleash the high-frequency spectrum.
  2. 2

    Impact ionization measurements and modeling for power PHEMT. di Baksht, T.

    Articolo

    Impact ionization measurements and modeling for power PHEMT.
  3. 3

    Impact ionization measurements and modeling for power PHEMT. di Baksht, T.

    Articolo

    Impact ionization measurements and modeling for power PHEMT.

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