Showing 1 - 10 results of 108 for search 'IEEE Transactions on electron devices', सवाल का समय: 0.02सेकंड परिणाम को परिष्कृत करें
  1. 1

    IEEE transactions on electron devices.

    प्रकाशित 2002
    पुस्तक

    IEEE transactions on electron devices.
  2. 2

    IEEE Transactions on electron devices.

    Available for University of the Philippines Diliman via IEEE Xplore Digital Library . Click here toaccess
    Continuing Resource

    IEEE Transactions on electron devices.
  3. 3

    Critical current characteristics of YBa2Cu3O 7 thin films on (110) SrTiO3. द्वारा Cukauskas, E.J

    में प्रकाशित IEEE Transactions on applied superconductivity
    लेख

    Critical current characteristics of YBa2Cu3O 7 thin films on (110) SrTiO3.
  4. 4

    Possibility of Nd1.9Ba1.1Cu3O7+δ and Pr1.14Ba1.86Cu3O7-δ single crystals for insulator in high-speed superconducting circuits. द्वारा Saba, F.M

    में प्रकाशित IEEE Transactions on applied superconductivity
    लेख

    Possibility of Nd1.9Ba1.1Cu3O7+δ and Pr1.14Ba1.86Cu3O7-δ single crystals for insulator in high-speed superconducting circuits.
  5. 5

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. द्वारा Sghaier, N.

    में प्रकाशित IEEE Transactions on electron devices
    लेख

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.
  6. 6

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. द्वारा Ming-Kwen Tsai

    में प्रकाशित IEEE Transactions on electron devices
    लेख

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.
  7. 7

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. द्वारा Sawada, K.

    में प्रकाशित IEEE Transactions on electron devices
    लेख

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
  8. 8

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. द्वारा Tsung-Hsing Yu

    में प्रकाशित IEEE Transactions on electron devices
    लेख

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  9. 9

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. द्वारा Meneghesso, G.

    में प्रकाशित IEEE Transactions on electron devices
    लेख

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.
  10. 10

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. द्वारा Nieh, R.E

    में प्रकाशित IEEE Transactions on electron devices
    लेख

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

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