Showing 1 - 3 results of 3 for search '"High electron mobility transistors."', זמן שאילתה: 0.02s Refine Results
  1. 1

    Indium phosphide ICs unleash the high-frequency spectrum. מאת Raghavan, G.

    הוצא לאור ב IEEE spectrum
    Article

    Indium phosphide ICs unleash the high-frequency spectrum.
  2. 2

    Impact ionization measurements and modeling for power PHEMT. מאת Baksht, T.

    Article

    Impact ionization measurements and modeling for power PHEMT.
  3. 3

    Impact ionization measurements and modeling for power PHEMT. מאת Baksht, T.

    Article

    Impact ionization measurements and modeling for power PHEMT.

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