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IEEE Transactions on power electronics.
Argitaratua 1986Available for University of the Philippines Diliman via IEEE Xplore Digital Library . Click here to access
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Development of high-current 4H-SiC ACCUFET.
Argitaratua izan da IEEE Transactions on electron devicesArtikulua -
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Impact ionization measurements and modeling for power PHEMT.
Argitaratua izan da IEEE Transactions on electron devicesArtikulua -
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An analysis of small-signal gate-drain resistance effect on RF power MOSFETs.
Argitaratua izan da IEEE Transactions on electron devicesArtikulua


