Erakusten 1 - 10 emaitzak -- 108 bilaketa honetara 'IEEE Transactions on electron devices', Bilaketaren denbora: 0,02s Findu emaitzak
  1. 1

    IEEE transactions on electron devices.

    Argitaratua 2002
    Liburua

    IEEE transactions on electron devices.
  2. 2

    IEEE Transactions on electron devices.

    Available for University of the Philippines Diliman via IEEE Xplore Digital Library . Click here toaccess
    Continuing Resource

    IEEE Transactions on electron devices.
  3. 3

    Critical current characteristics of YBa2Cu3O 7 thin films on (110) SrTiO3. nork Cukauskas, E.J

    Artikulua

    Critical current characteristics of YBa2Cu3O 7 thin films on (110) SrTiO3.
  4. 4

    Possibility of Nd1.9Ba1.1Cu3O7+δ and Pr1.14Ba1.86Cu3O7-δ single crystals for insulator in high-speed superconducting circuits. nork Saba, F.M

    Artikulua

    Possibility of Nd1.9Ba1.1Cu3O7+δ and Pr1.14Ba1.86Cu3O7-δ single crystals for insulator in high-speed superconducting circuits.
  5. 5

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. nork Sghaier, N.

    Artikulua

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.
  6. 6

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. nork Ming-Kwen Tsai

    Artikulua

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.
  7. 7

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. nork Sawada, K.

    Artikulua

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
  8. 8

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. nork Tsung-Hsing Yu

    Artikulua

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  9. 9

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. nork Meneghesso, G.

    Artikulua

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.
  10. 10

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. nork Nieh, R.E

    Artikulua

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

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