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Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.
Argitaratua izan da IEEE Transactions on electron devicesArtikulua -
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Development of high-current 4H-SiC ACCUFET.
Argitaratua izan da IEEE Transactions on electron devicesArtikulua -
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SiC power diodes provide breakthrough performance for a wide range of applications.
Argitaratua izan da IEEE Transactions on power electronicsArtikulua -
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Development of high-current 4H-SiC ACCUFET.
Argitaratua izan da IEEE Transactions on electron devicesArtikulua