IEEE transactions on electron devices.

IEEE Transactions on electron devices.

Available for University of the Philippines Diliman via IEEE Xplore Digital Library . Click here toaccess

Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. حسب Sghaier, N.

Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. حسب Ming-Kwen Tsai

Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. حسب Sawada, K.

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. حسب Tsung-Hsing Yu

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. حسب Meneghesso, G.

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. حسب Nieh, R.E

Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications. حسب Sen-Shyong Fann

The effects of nonlocal impact ionization on the speed of avalanche photodiodes. حسب Hambleton, P.J