يعرض 1 - 10 نتائج من 16 نتيجة بحث عن '"3.3 V."', وقت الاستعلام: 0.06s تنقيح النتائج
  1. 1

    A 3.3-V ISDN U-interface line driver with a new IQ-control circuit. حسب Jinup Lim

    الحاوية / القاعدة IEEE Journal of solid state circuits
    مقال

    A 3.3-V ISDN U-interface line driver with a new IQ-control circuit.
  2. 2

    An adaptive PAM-4 5-Gb حسب Stonick, J.T

    الحاوية / القاعدة IEEE Journal of solid state circuits
    مقال

    An adaptive PAM-4 5-Gb
  3. 3

    A fully integrated 43.2-Gb 4 demux IC in InP HBT technology. حسب Nielsen, S.

    الحاوية / القاعدة IEEE Journal of solid state circuits
    مقال

    A fully integrated 43.2-Gb 4 demux IC in InP HBT technology.
  4. 4

    A multi-rate 9.953-12.5-GHz 0.2-μm SiGe BiCMOS LC oscillator using a resistor-tuned varactor and a supply pushing cancellation circuit. حسب Maxim, A.

    الحاوية / القاعدة IEEE Journal of solid state circuits
    مقال

    A multi-rate 9.953-12.5-GHz 0.2-μm SiGe BiCMOS LC oscillator using a resistor-tuned varactor and a supply pushing cancellation circuit.
  5. 5

    Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager. حسب Inoue, I.

    الحاوية / القاعدة IEEE Transactions on electron devices
    مقال

    Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager.
  6. 6

    A high-speed, 240-frames حسب Krymski, A.I

    الحاوية / القاعدة IEEE Transactions on electron devices
    مقال

    A high-speed, 240-frames
  7. 7

    An APS with 2-D winner-take-all selection employing adaptive spatial filtering and false alarm reduction. حسب Fish, A.

    الحاوية / القاعدة IEEE Transactions on electron devices
    مقال

    An APS with 2-D winner-take-all selection employing adaptive spatial filtering and false alarm reduction.
  8. 8

    Efficient library characterization for high-level power estimation. حسب Dhaou, I.B

    الحاوية / القاعدة IEEE Transactions on VLSI systems
    مقال

    Efficient library characterization for high-level power estimation.
  9. 9

    A 10-bit wide-band CMOS direct digital RF amplitude modulator. حسب Yijun Zhou

    الحاوية / القاعدة IEEE Journal of solid state circuits
    مقال

    A 10-bit wide-band CMOS direct digital RF amplitude modulator.
  10. 10

    A 1.5-V 12-bit power-efficient continuous-time third-order ΣΔ modulator. حسب Gerfers, F.

    الحاوية / القاعدة IEEE Journal of solid state circuits
    مقال

    A 1.5-V 12-bit power-efficient continuous-time third-order ΣΔ modulator.

أدوات البحث: