Modeling and electrothermal simulation of SiC power devices using Silvacoà ATLAS по Pushpakaran, Bejoy (Bejoy N.), Bayne, Stephen (Stephen B.)

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Fundamentals of silicon carbide technology growth, characterization, devices, and applications по Kimoto, Tsunenobu, Cooper, James A.

Available for UP System via Wiley Online Library

Formation of nanopillars on 4H-SiC via self-masking CF4 plasma etching in a gas disharge ion source по Gines, Arnold Rey B.

Grain boundary and triple junction chemistry of silicon carbide sintered with minimum additives for armor applications по Pabit, Edgardo L.

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Process technology for silicon carbide devices

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Kinetics of self-propagating high temperature synthesis of silicon carbide по Aungon, Zenaida O.

Kinetics of self-propagating high temperature synthesis of silicon carbide по Aungon, Zenaida O.

Silicon carbide and related materials, 1995 proceedings of the Sixth International Conference, Kyoto, Japan, 18-21 September 1995

High temperature electronics proceedings of Symposium E on High-Temperature Electronics: Materials, Devices, and Applications of the 1994 E-MRS Spring Conference, Strasbourg, Franc...

Silicon carbide ceramics