Characterisation and control of defects in semiconductors

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Dopants and defects in semiconductors по McCluskey, Matthew D., Haller, Eugene E.

Characterization of silicon p-n junctions fabricated by ion shower doping по Diaz, Jose Mario A.

The diffusion of phosphorus into diamond from phosphorus-doped silicon through field enhanced diffusion by optical activation по Moreno, Dickerson C.

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Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures по Patricio, Michelee G.

Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST) по Madrid, Pepe L.

Delta-doping of semiconductors

Doping in III-V semiconductors Cambridge studies in semiconductor physics and microelectronic engineering по Schubert, E. Fred

Ion implantation technology-92

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Rapid thermal processing science and technology

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