Molecular beam epitaxy materials and applications for electronics and optoelectronics

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Photoluminescence excitation spectroscopy of coupled and decoupled GaAs/AlxGa1-xAs double quantum wells по De las Alas, Kaye Ann C.

Growth of gold-assisted gallium arsenide nanowires on silicon substrates via molecular beam epitaxy по Delos Santos, Ramon Mandapat

X-Ray diffraction analysis of MBE-grown InxGa1-xAs/GaAs superlattices on GaAs (100) substrates по Fernando, Joel G.

Molecular beam epitaxial growth of InAs/InAlAs quantum wires on Inp (100) substrate по Casco, Ma. Frantessa

Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures по Patricio, Michelee G.

X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE) по Guiao, Luisito C.

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy по Somintac, Armando S.

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates по Sarmiento, Raymund Lee Antonio C.

A report on the initial growth of GaAs and A1GaAs via molecular beam epitaxy по Somintac, Armando S.