Terahertz emission from GaAs-AlGaAs core-shell nanowires gan Ibañes, Jasher John A.

Growth of gold-assisted gallium arsenide nanowires on silicon substrates via molecular beam epitaxy gan Delos Santos, Ramon Mandapat

Time-resolved photoluminescence of coupled GaAs/AlGaAs asymmetric quantum wells gan Mateo, Jennette N. 1981-

Fabrication of GaAs devices gan Baca, A. G., Ashby, Carol Iris Hill 1953-

Available for University of the Philippines Diliman via IET Digital Library. Click here to access
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Deep level transient spectroscopy of 50n and 120n GaAs/AlGaAs quantum well grown on on-axis (100) and off-axis GaAs (4n towards (111)) GaAs substrates gan Sy, Joanes Paulus Mansilla

Growth and device fabrication of indium arsenide quantum dot based emitters gan Somintac, Armando Soriano 1972-

Thermal oxidation of AIAs and the possibility of confinement in an optical device gan Agra, Francisco A.

Gallium arsenide IC applications handbook

Compound semiconductors 1994 proceedings of the Twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994

Microwave field-effect transistors theory, design, and applications gan Pengelly, Raymond S. 1948-

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