TCAD for Si, SiGe and GaAs integrated circuits de réir Armstrong, G. A., Maiti, C. K.

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X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE) de réir Guiao, Luisito C.

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy de réir Somintac, Armando S.

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates de réir Sarmiento, Raymund Lee Antonio C.

Growth and electrical characterization of liquid phase epitaxial gallium arsenide and heterojunctions de réir Laniog, Jean Naldo

VLSI fabrication principles silicon and gallium arsenide de réir Ghandhi, Sorab Khushro 1928-