TCAD for Si, SiGe and GaAs integrated circuits von Armstrong, G. A., Maiti, C. K.

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X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE) von Guiao, Luisito C.

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates von Sarmiento, Raymund Lee Antonio C.

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy von Somintac, Armando S.

Growth and electrical characterization of liquid phase epitaxial gallium arsenide and heterojunctions von Laniog, Jean Naldo

VLSI fabrication principles silicon and gallium arsenide von Ghandhi, Sorab Khushro 1928-