TCAD for Si, SiGe and GaAs integrated circuits gan Armstrong, G. A., Maiti, C. K.

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X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE) gan Guiao, Luisito C.

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy gan Somintac, Armando S.

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates gan Sarmiento, Raymund Lee Antonio C.

Growth and electrical characterization of liquid phase epitaxial gallium arsenide and heterojunctions gan Laniog, Jean Naldo

VLSI fabrication principles silicon and gallium arsenide gan Ghandhi, Sorab Khushro 1928-