TCAD for Si, SiGe and GaAs integrated circuits অনুযায়ী Armstrong, G. A., Maiti, C. K.

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X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE) অনুযায়ী Guiao, Luisito C.

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy অনুযায়ী Somintac, Armando S.

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates অনুযায়ী Sarmiento, Raymund Lee Antonio C.

Growth and electrical characterization of liquid phase epitaxial gallium arsenide and heterojunctions অনুযায়ী Laniog, Jean Naldo

VLSI fabrication principles silicon and gallium arsenide অনুযায়ী Ghandhi, Sorab Khushro 1928-