Canlyniadau Chwilio
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Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy
Cyhoeddwyd 2001Traethawd Ymchwil -
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Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates
Cyhoeddwyd 2001Traethawd Ymchwil -
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Growth of gold-assisted gallium arsenide nanowires on silicon substrates via molecular beam epitaxy
Cyhoeddwyd 2009Traethawd Ymchwil -
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Photoluminescence excitation spectroscopy of coupled and decoupled GaAs/AlxGa1-xAs double quantum wells
Cyhoeddwyd 2013Traethawd Ymchwil -
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Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures
Cyhoeddwyd 2002Traethawd Ymchwil -
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X-Ray diffraction analysis of MBE-grown InxGa1-xAs/GaAs superlattices on GaAs (100) substrates
Cyhoeddwyd 2009Traethawd Ymchwil


