Torthaí cuardaigh
-
1
Gas source molecular beam epitaxy growth and properties of phosphorus containing III-V heterostructures
Foilsithe / Cruthaithe 1993LEABHAR -
2
X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)
Foilsithe / Cruthaithe 2001Tráchtas -
3
Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy
Foilsithe / Cruthaithe 2001Tráchtas -
4
Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates
Foilsithe / Cruthaithe 2001Tráchtas -
5
Growth of gold-assisted gallium arsenide nanowires on silicon substrates via molecular beam epitaxy
Foilsithe / Cruthaithe 2009Tráchtas -
6
Photoluminescence excitation spectroscopy of coupled and decoupled GaAs/AlxGa1-xAs double quantum wells
Foilsithe / Cruthaithe 2013Tráchtas -
7
-
8
Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures
Foilsithe / Cruthaithe 2002Tráchtas -
9
-
10
X-Ray diffraction analysis of MBE-grown InxGa1-xAs/GaAs superlattices on GaAs (100) substrates
Foilsithe / Cruthaithe 2009Tráchtas


