Modeling and electrothermal simulation of SiC power devices using SilvacoÃ ATLAS

Dettagli Bibliografici
Autori principali:	Pushpakaran, Bejoy (Autore), Bayne, Stephen (Autore)
Natura:	Electronic Resource
Lingua:	English
Pubblicazione:	New Jersey World Scientific [2019]
Soggetti:	ATLAS TCAD (Computer program). Wide gap semiconductors. Silicon carbide. Electronic books.
Accesso online:	Available for University of the Philippines Diliman via World Scientific. Click here to access Also available remotely for University of the Philippines Diliman via World Scientific. Click here to access thru EZproxy