Modeling and electrothermal simulation of SiC power devices using Silvacoà ATLAS

Modeling and electrothermal simulation of SiC power devices using Silvacoà ATLAS

Dades bibliogràfiques
Autors principals: Pushpakaran, Bejoy (Autor), Bayne, Stephen (Autor)
Format: Electronic Resource
Idioma:English
Publicat: New Jersey World Scientific [2019]
Matèries:
ATLAS TCAD (Computer program).
Wide gap semiconductors.
Silicon carbide.
Electronic books.
Accés en línia:Available for University of the Philippines Diliman via World Scientific. Click here to access
Also available remotely for University of the Philippines Diliman via World Scientific. Click here to access thru EZproxy