Modeling and electrothermal simulation of SiC power devices using SilvacoÃ ATLAS

Podrobná bibliografie
Hlavní autoři:	Pushpakaran, Bejoy (Bejoy N.) (Autor), Bayne, Stephen (Stephen B.) (Autor)
Médium:	Electronic Resource
Jazyk:	English
Vydáno:	New Jersey World Scientific [2019]
Témata:	ATLAS TCAD (Computer program). Wide gap semiconductors. Silicon carbide. Electronic books.
On-line přístup:	Available for University of the Philippines Diliman via World Scientific. Click here to access Also available remotely for University of the Philippines Diliman via World Scientific. Click here to access thru EZproxy