Characterization of wide bandgap power semiconductor devices

Characterization of wide bandgap power semiconductor devices

Bibliographische Detailangaben
Hauptverfasser: Wang, Fei (Fred) (VerfasserIn), Zhang, Zheyu (VerfasserIn), Jones, Edward A. (VerfasserIn)
Format: Electronic Resource
Sprache:English
Veröffentlicht: London, United Kingdom The Institution of Engineering and Technology [2018]
Schriftenreihe:IET Energy engineering 128
Schlagworte:
Wide gap semiconductors.
Power semiconductors.
Electric capacity.
Electronic books.
Online Zugang:Available for University of the Philippines Diliman via IET Digital Library. Click here to access
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